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MMBTSC5065
NPN Silicon Epitaxial Planar Transistor for low noise, high gain amplifier at VHF~UHF band. The transistor is subdivided into two groups O and Y, according to its DC current gain.
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Base Current Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IB IC Ptot Tj TS Value 20 12 3 15 30 200 125 -55 to +125 Unit V V V mA mA mW
O
C C
O
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 20/10/2005
MMBTSC5065
Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=5V, IC=10mA Current Gain Group O Y Collector Cutoff Current at VCB=10V Emitter Cutoff Current at VEB=1.0V Transition Frequency at VCE=5V, IC=10mA Reverse Transfer Capacitance at VCB=5V, f=1MHz Output Capacitance at VCB=5V, f=1MHz Insertion Gain at VCE=5V, IC=10mA, f=500MHz Insertion Gain at VCE=5V, IC=10mA, f=1.0GHz Noise Figure at VCE=5V, IC=3mA, f=500MHz Noise Figure at VCE=5V, IC=3mA, f=1.0GHz
1) 1) 1)
Min.
Typ.
Max.
Unit
hFE hFE ICBO IEBO fT Cre Cob S21e S21e NF1 NF2
2 1
80 120 5 8.5 -
7 0.45 0.7 17 12 1 1.1
160 240 1 1 0.9 2
A A GHz pF pF dB dB dB dB
2 2
Cre is measured by 3 terminal method with capacitance bridge.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 20/10/2005

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